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NJVMJD45H11RLG-VF01

  • NJVMJD45H11RLG-VF01
  • NJVMJD45H11RLG-VF01

NJVMJD45H11RLG-VF01

NJVMJD45H11RLG-VF01

ON Semiconductor

NJVMJD45H11RLG-VF01 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJVMJD45H11RLG-VF01 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MJD45H11
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 1.75W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A 1V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 8A
Transition Frequency 90MHz
Frequency - Transition 90MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.44000 $0.44
500 $0.4356 $217.8
1000 $0.4312 $431.2
1500 $0.4268 $640.2
2000 $0.4224 $844.8
2500 $0.418 $1045
NJVMJD45H11RLG-VF01 Product Details

NJVMJD45H11RLG-VF01 Overview


This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the base current and the collector current.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).The part has a transition frequency of 90MHz.Device displays Collector Emitter Breakdown (80V maximal voltage).

NJVMJD45H11RLG-VF01 Features


the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
a transition frequency of 90MHz

NJVMJD45H11RLG-VF01 Applications


There are a lot of ON Semiconductor NJVMJD45H11RLG-VF01 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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