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BCP53-10HX

BCP53-10HX

BCP53-10HX

Nexperia USA Inc.

BCP53-10HX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCP53-10HX Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pin Count 4
Power - Max 2.2W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 100MHz
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.13530 $0.1353
2,000 $0.12540 $0.2508
5,000 $0.11880 $0.594
10,000 $0.11220 $1.122
25,000 $0.10890 $2.7225
BCP53-10HX Product Details

BCP53-10HX Overview


In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).The device exhibits a collector-emitter breakdown at 80V.

BCP53-10HX Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA

BCP53-10HX Applications


There are a lot of Nexperia USA Inc. BCP53-10HX applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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