FCX591TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FCX591TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
-60V
Max Power Dissipation
1W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
Frequency
150MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FCX591
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
-600mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
-1A
Height
1.5mm
Length
4.5mm
Width
2.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.832440
$0.83244
10
$0.785321
$7.85321
100
$0.740869
$74.0869
500
$0.698933
$349.4665
1000
$0.659370
$659.37
FCX591TA Product Details
FCX591TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 5V.A collector emitter saturation voltage of -600mV ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 100mA, 1A.Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In the part, the transition frequency is 150MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
FCX591TA Features
the DC current gain for this device is 100 @ 500mA 5V a collector emitter saturation voltage of -600mV the vce saturation(Max) is 600mV @ 100mA, 1A the emitter base voltage is kept at 5V the current rating of this device is -1A a transition frequency of 150MHz
FCX591TA Applications
There are a lot of Diodes Incorporated FCX591TA applications of single BJT transistors.