MPSA77RLRAG Overview

DC current gain in this device equals 10000 @ 100mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.A constant collector voltage of -500mA is necessary for high efficiency.Emitter base voltages of 10V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.As you can see, the part has a transition frequency of 125MHz.A maximum collector current of 500mA volts can be achieved.

MPSA77RLRAG Features

the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz

MPSA77RLRAG Applications

There are a lot of ON Semiconductor MPSA77RLRAG applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver