DMC3021LK4-13

new-10%

Manufacturer part number:DMC3021LK4-13

Manufacturer:Diodes Incorporated

Description:MOSFET N/P-CH 30V TO252-4L

Case Package:SOT-23

Datasheet:DMC3021LK4-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-5, DPak (4 Leads + Tab), TO-252AD
Number of Pins	5
Weight	3.949996g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	Other Transistors
Max Power Dissipation	2.7W
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	DMC3021
Pin Count	4
JESD-30 Code	R-PSSO-G4
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	2.5 ns
FET Type	N and P-Channel, Common Drain
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	21m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	751pF @ 10V
Current - Continuous Drain (Id) @ 25°C	9.4A 6.8A
Gate Charge (Qg) (Max) @ Vgs	17.4nC @ 10V
Rise Time	6.6ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	6.3 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	6.8A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6.7A
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	40A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant