DMC6040SSD-13

new-10%

Manufacturer part number:DMC6040SSD-13

Manufacturer:Diodes Incorporated

Description:MOSFET N/P-CH 60V 5.1A/3.1A 8-SO

Case Package:SOT-23

Datasheet:DMC6040SSD-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Max Power Dissipation	1.24W
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Reference Standard	AEC-Q101
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	3.7 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1130pF @ 15V
Current - Continuous Drain (Id) @ 25°C	5.1A 3.1A
Gate Charge (Qg) (Max) @ Vgs	20.8nC @ 10V
Rise Time	6.3ns
Drain to Source Voltage (Vdss)	60V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	26.1 ns
Turn-Off Delay Time	58.7 ns
Continuous Drain Current (ID)	3.1A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	5.1A
Drain-source On Resistance-Max	0.04Ohm
Drain to Source Breakdown Voltage	-60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant