FDMS8090

new-10%

Manufacturer part number:FDMS8090

Manufacturer:ON Semiconductor

Description:FDMS8090 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMS8090 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Weight	250mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory	FET General Purpose Power
Max Power Dissipation	2.2W
JESD-30 Code	R-PDSO-N4
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	59W
Case Connection	DRAIN
Turn On Delay Time	10.6 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 50V
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Rise Time	4.6ns
Drain to Source Voltage (Vdss)	100V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	17.4 ns
Continuous Drain Current (ID)	10A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	40A
Drain-source On Resistance-Max	0.013Ohm
Drain to Source Breakdown Voltage	100V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	750μm
Length	5mm
Width	6mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free