US6J11TR

new-10%

Manufacturer part number:US6J11TR

Manufacturer:ROHM Semiconductor

Description:MOSFET 2P-CH 12V 1.3A TUMT6

Case Package:SOT-23

Datasheet:US6J11TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin/Copper (Sn/Cu)
Subcategory	Other Transistors
Max Power Dissipation	1W
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	10
Base Part Number	*J11
Pin Count	6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	8 ns
Power - Max	320mW
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	260m Ω @ 1.3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 6V
Gate Charge (Qg) (Max) @ Vgs	2.4nC @ 4.5V
Rise Time	10ns
Drain to Source Voltage (Vdss)	12V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	1.3A
Gate to Source Voltage (Vgs)	10V
Drain Current-Max (Abs) (ID)	0.0013A
DS Breakdown Voltage-Min	12V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free