NTLJD3119CTBG

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Manufacturer part number:NTLJD3119CTBG

Manufacturer:ON Semiconductor

Description:NTLJD3119CTBG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTLJD3119CTBG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	6-WDFN Exposed Pad
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	µCool™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	Other Transistors
Max Power Dissipation	710mW
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	NTLJD3119C
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	710mW
Turn On Delay Time	5.2 ns
FET Type	N and P-Channel
Rds On (Max) @ Id, Vgs	65m Ω @ 3.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	271pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.6A 2.3A
Gate Charge (Qg) (Max) @ Vgs	3.7nC @ 4.5V
Rise Time	13.2ns
Drain to Source Voltage (Vdss)	20V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	13.2 ns
Turn-Off Delay Time	13.7 ns
Continuous Drain Current (ID)	4.6A
Threshold Voltage	700mV
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	3.8A
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	18A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	700 mV
Height	750μm
Length	2mm
Width	2mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free