DMG1012TQ-7

new-10%

Manufacturer part number:DMG1012TQ-7

Manufacturer:Diodes Incorporated

Description:Trans MOSFET N-CH 20V 0.63A Automotive 3-Pin SOT-523 T/R

Case Package:SOT-23

Datasheet:DMG1012TQ-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-523
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	280mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	280mW
Turn On Delay Time	5.1 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	400m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	60.67pF @ 16V
Current - Continuous Drain (Id) @ 25°C	630mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.74nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±6V
Turn-Off Delay Time	26.7 ns
Continuous Drain Current (ID)	630mA
Gate to Source Voltage (Vgs)	6V
Drain-source On Resistance-Max	0.4Ohm
Drain to Source Breakdown Voltage	20V
Max Junction Temperature (Tj)	150°C
Height	900μm
RoHS Status	ROHS3 Compliant