DMG3415UFY4-7

new-10%

Manufacturer part number:DMG3415UFY4-7

Manufacturer:Diodes Incorporated

Description:MOSFET P-CH 16V 2.5A DFN-3

Case Package:SOT-23

Datasheet:DMG3415UFY4-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-XFDFN
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	400mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	490mW
Case Connection	DRAIN
Turn On Delay Time	79 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	39m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	281.9pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.5A Ta
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Rise Time	175ns
Drain to Source Voltage (Vdss)	16V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	568 ns
Turn-Off Delay Time	884.5 ns
Continuous Drain Current (ID)	2.5A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-16V
Height	350μm
Length	2.08mm
Width	1.575mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free