DMG4800LSD-13

new-10%

Manufacturer part number:DMG4800LSD-13

Manufacturer:Diodes Incorporated

Description:MOSFET 2N-CH 30V 7.5A 8SO

Case Package:SOT-23

Datasheet:DMG4800LSD-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Max Power Dissipation	1.17W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	DMG4800LSD
Pin Count	8
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.17W
Turn On Delay Time	5.03 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	16m Ω @ 9A, 10V
Vgs(th) (Max) @ Id	1.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	798pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	8.56nC @ 5V
Rise Time	4.5ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	8.55 ns
Turn-Off Delay Time	26.33 ns
Continuous Drain Current (ID)	7.5A
Threshold Voltage	1.6V
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.016Ohm
Drain to Source Breakdown Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1.7mm
Length	4.95mm
Width	3.95mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free