SQS966ENW-T1_GE3

new-10%

Manufacturer part number:SQS966ENW-T1_GE3

Manufacturer:Vishay Siliconix

Description:Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET

Case Package:SOT-23

Datasheet:SQS966ENW-T1_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount, Wettable Flank
Package / Case	PowerPAK® 1212-8W Dual
Supplier Device Package	PowerPAK® 1212-8W Dual
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power - Max	27.8W Tc
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	36mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	572pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	8.8nC @ 10V
Drain to Source Voltage (Vdss)	60V
FET Feature	Standard
RoHS Status	ROHS3 Compliant