ZXMN3A02N8TA

new-10%

Manufacturer part number:ZXMN3A02N8TA

Manufacturer:Diodes Incorporated

Description:MOSFET 30V N Chnl UMOS

Case Package:SOT-23

Datasheet:ZXMN3A02N8TA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	9A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	1.56W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	3.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7.3A Ta
Gate Charge (Qg) (Max) @ Vgs	26.8nC @ 10V
Rise Time	5.5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	5.5 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	9A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	9A
Drain-source On Resistance-Max	0.025Ohm
Drain to Source Breakdown Voltage	30V
RoHS Status	ROHS3 Compliant