MMIX1F230N20T

new-10%

Manufacturer part number:MMIX1F230N20T

Manufacturer:IXYS

Description:SMPD MOSFET single Trench 168A 200V

Case Package:SOT-23

Datasheet:MMIX1F230N20T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	24-PowerSMD, 21 Leads
Number of Pins	24
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2012
Series	GigaMOS™, HiPerFET™, TrenchT2™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	21
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	21
JESD-30 Code	R-PDSO-G21
Number of Elements	1
Power Dissipation-Max	600W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
Turn On Delay Time	58 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.3m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	28000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	168A Tc
Gate Charge (Qg) (Max) @ Vgs	378nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	62 ns
Continuous Drain Current (ID)	168A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.0083Ohm
Pulsed Drain Current-Max (IDM)	630A
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	3000 mJ
Height	5.7mm
Length	25.25mm
Width	23.25mm
RoHS Status	ROHS3 Compliant