DMHC6070LSD-13

new-10%

Manufacturer part number:DMHC6070LSD-13

Manufacturer:Diodes Incorporated

Description:MOSFET 2N/2P-CHA 60V 3.1A 8SO

Case Package:SOT-23

Datasheet:DMHC6070LSD-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Max Power Dissipation	1.6W
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	4
Configuration	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
FET Type	2 N and 2 P-Channel (H-Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 1A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	731pF @ 20V
Current - Continuous Drain (Id) @ 25°C	3.1A 2.4A
Gate Charge (Qg) (Max) @ Vgs	11.5nC @ 10V
Drain to Source Voltage (Vdss)	60V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID)	2.4A
Drain Current-Max (Abs) (ID)	3.1A
Drain-source On Resistance-Max	0.1Ohm
Pulsed Drain Current-Max (IDM)	15A
DS Breakdown Voltage-Min	60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	ROHS3 Compliant