DMN1017UCP3-7

new-10%

Manufacturer part number:DMN1017UCP3-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 12V 7.5A X3-DSN1010

Case Package:SOT-23

Datasheet:DMN1017UCP3-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Mounting Type	Surface Mount
Package / Case	3-XDFN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
JESD-609 Code	e3
Part Status	Active
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	S-XBCC-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.47W
Operating Mode	ENHANCEMENT MODE
Case Connection	SOURCE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	17m Ω @ 5A, 3.3V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1503pF @ 6V
Current - Continuous Drain (Id) @ 25°C	7.5A Ta
Gate Charge (Qg) (Max) @ Vgs	16nC @ 3.3V
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 3.3V
Vgs (Max)	±8V
Drain Current-Max (Abs) (ID)	7.5A
Drain-source On Resistance-Max	0.024Ohm
DS Breakdown Voltage-Min	12V
Feedback Cap-Max (Crss)	389 pF
RoHS Status	ROHS3 Compliant