DMN1019UVT-7

new-10%

Manufacturer part number:DMN1019UVT-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 12V 10.7A TSOT26

Case Package:SOT-23

Datasheet:DMN1019UVT-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.73W Ta
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10m Ω @ 9.7A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2588pF @ 10V
Current - Continuous Drain (Id) @ 25°C	10.7A Ta
Gate Charge (Qg) (Max) @ Vgs	50.4nC @ 8V
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.2V 4.5V
Vgs (Max)	±8V
Continuous Drain Current (ID)	10.7A
Drain-source On Resistance-Max	0.01Ohm
Pulsed Drain Current-Max (IDM)	70A
DS Breakdown Voltage-Min	12V
Avalanche Energy Rating (Eas)	4.7 mJ
RoHS Status	ROHS3 Compliant