IPP100N04S303AKSA1

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Manufacturer part number:IPP100N04S303AKSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 40V 100A Automotive 3-Pin(3+Tab) TO-220AB Tube

Case Package:SOT-23

Datasheet:IPP100N04S303AKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	214W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	214W
Turn On Delay Time	30 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.8m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 150μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	9600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	145nC @ 10V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	17 ns
Turn-Off Delay Time	46 ns
Continuous Drain Current (ID)	100A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	40V
Drain-source On Resistance-Max	0.0028Ohm
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	898 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead