DMN2019UTS-13

new-10%

Manufacturer part number:DMN2019UTS-13

Manufacturer:Diodes Incorporated

Description:MOSFET 2N-CH 20V 5.4A TSSOP-8

Case Package:SOT-23

Datasheet:DMN2019UTS-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173, 4.40mm Width)
Number of Pins	8
Weight	157.991892mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Resistance	18.5mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Max Power Dissipation	780mW
Base Part Number	DMN2019
Number of Channels	2
Element Configuration	Dual
Turn On Delay Time	53 ns
FET Type	2 N-Channel (Dual) Common Drain
Rds On (Max) @ Id, Vgs	18.5m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	143pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	8.8nC @ 4.5V
Rise Time	78ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	234 ns
Turn-Off Delay Time	562 ns
Continuous Drain Current (ID)	5.4A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free