DMN2400UV-7

new-10%

Manufacturer part number:DMN2400UV-7

Manufacturer:Diodes Incorporated

Description:MOSFET 2N-CH 20V 1.33A SOT563

Case Package:SOT-23

Datasheet:DMN2400UV-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Weight	3.005049mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Digi-Reel®
Published	2017
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	500mOhm
Additional Feature	HIGH RELIABILITY, LOW THRESHOLD
Subcategory	FET General Purpose Power
Max Power Dissipation	530mW
Terminal Form	FLAT
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	530mW
Turn On Delay Time	4.06 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	480m Ω @ 200mA, 5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	36pF @ 16V
Gate Charge (Qg) (Max) @ Vgs	0.5nC @ 4.5V
Rise Time	7.28ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	10.54 ns
Turn-Off Delay Time	13.74 ns
Continuous Drain Current (ID)	1.33A
Threshold Voltage	900mV
Gate to Source Voltage (Vgs)	12V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	600μm
Length	1.7mm
Width	1.25mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free