SIZF920DT-T1-GE3

new-10%

Manufacturer part number:SIZF920DT-T1-GE3

Manufacturer:Vishay Siliconix

Description:Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode

Case Package:SOT-23

Datasheet:SIZF920DT-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Supplier Device Package	8-PowerPair® (6x5)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET® Gen IV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power - Max	3.9W Ta 28W Tc 4.5W Ta 74W Tc
FET Type	2 N-Channel (Dual), Schottky
Rds On (Max) @ Id, Vgs	3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA, 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 15V 5230pF @ 15V
Current - Continuous Drain (Id) @ 25°C	28A Ta 76A Tc 49A Ta 197A Tc
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V, 125nC @ 10V
Drain to Source Voltage (Vdss)	30V
FET Feature	Standard
RoHS Status	ROHS3 Compliant