In a Pack of 75, Dual P-Channel MOSFET, 200 mA, 30 V, 6-Pin SOT-363 Nexperia NX3008PBKS, 115
SOT-23
NX3008PBKS,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Series
Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
445mW
Pin Count
6
Number of Elements
2
Element Configuration
Dual
Power Dissipation
445mW
Turn On Delay Time
19 ns
FET Type
2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs
4.1 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
46pF @ 15V
Gate Charge (Qg) (Max) @ Vgs
0.75nC @ 4.5V
Rise Time
30ns
Drain to Source Voltage (Vdss)
30V
Fall Time (Typ)
38 ns
Turn-Off Delay Time
65 ns
Continuous Drain Current (ID)
200mA
Gate to Source Voltage (Vgs)
8V
Max Dual Supply Voltage
-30V
Drain to Source Breakdown Voltage
-30V
FET Feature
Logic Level Gate
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.07700
$0.231
6,000
$0.06930
$0.4158
15,000
$0.06160
$0.924
30,000
$0.05775
$1.7325
75,000
$0.05121
$3.84075
150,000
$0.04928
$7.392
NX3008PBKS,115 Product Details
The Nexperia NX3008PBKS, 115 is a dual P-Channel MOSFET array in a pack of 75. This product is designed for use in a variety of applications, including power management, motor control, and signal switching. It features a maximum current rating of 200 mA and a maximum voltage rating of 30 V. The device is housed in a 6-pin SOT-363 package, making it ideal for space-constrained applications. This product is designed to provide reliable performance and long-term reliability. It is also RoHS compliant, making it an environmentally friendly choice. The Nexperia NX3008PBKS, 115 is an ideal choice for a variety of applications requiring a reliable, high-performance MOSFET array.