DMN26D0UDJ-7

new-10%

Manufacturer part number:DMN26D0UDJ-7

Manufacturer:Diodes Incorporated

Description:MOSFET 2N-CH 20V 0.24A SOT963

Case Package:SOT-23

Datasheet:DMN26D0UDJ-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-963
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	ESD PROTECTION
Subcategory	FET General Purpose Powers
Max Power Dissipation	300mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	DMN26D0UDJ
Pin Count	6
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Turn On Delay Time	3.8 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id	1.05V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	14.1pF @ 15V
Rise Time	7.9ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	15.2 ns
Turn-Off Delay Time	13.4 ns
Continuous Drain Current (ID)	240mA
Gate to Source Voltage (Vgs)	10V
Drain Current-Max (Abs) (ID)	0.18A
Drain-source On Resistance-Max	3Ohm
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	450μm
Length	1.05mm
Width	850μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free