NTJD4158CT1G

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Manufacturer part number:NTJD4158CT1G

Manufacturer:ON Semiconductor

Description:NTJD4158CT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTJD4158CT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	1.5Ohm
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	270mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	250mA
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	NTJD4158C
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	270mW
Turn On Delay Time	15 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.5 Ω @ 10mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	33pF @ 5V
Current - Continuous Drain (Id) @ 25°C	250mA 880mA
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 5V
Rise Time	6.5ns
Drain to Source Voltage (Vdss)	30V 20V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	3.5 ns
Turn-Off Delay Time	13.5 ns
Continuous Drain Current (ID)	880mA
Threshold Voltage	1.2V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1mm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free