DMN26D0UT-7

new-10%

Manufacturer part number:DMN26D0UT-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 20V 230MA SOT523

Case Package:SOT-23

Datasheet:DMN26D0UT-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-523
Number of Pins	3
Weight	2.012816mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	3Ohm
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	300mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Turn On Delay Time	3.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	14.1pF @ 15V
Current - Continuous Drain (Id) @ 25°C	230mA Ta
Rise Time	7.9ns
Drive Voltage (Max Rds On,Min Rds On)	1.2V 4.5V
Vgs (Max)	±10V
Fall Time (Typ)	15.2 ns
Turn-Off Delay Time	13.4 ns
Continuous Drain Current (ID)	230mA
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	10V
Drain to Source Breakdown Voltage	20V
Max Junction Temperature (Tj)	150°C
Height	900μm
Length	1.7mm
Width	850μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free