DMN2990UFA-7B

new-10%

Manufacturer part number:DMN2990UFA-7B

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 20V 0.51A

Case Package:SOT-23

Datasheet:DMN2990UFA-7B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-XFDFN
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2013
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	400mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	990m Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	27.6pF @ 16V
Current - Continuous Drain (Id) @ 25°C	510mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.5nC @ 4.5V
Rise Time	3.3ns
Drive Voltage (Max Rds On,Min Rds On)	1.2V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	6.4 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	510mA
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.99Ohm
Drain to Source Breakdown Voltage	20V
Feedback Cap-Max (Crss)	5.6 pF
Height	350μm
Length	650μm
Width	850μm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free