DMN3200U-7

new-10%

Manufacturer part number:DMN3200U-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 30V 2.2A SOT23-3

Case Package:SOT-23

Datasheet:DMN3200U-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	650mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	650mW
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	90m Ω @ 2.2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.2A Ta
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±8V
Continuous Drain Current (ID)	2.2A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.09Ohm
Drain to Source Breakdown Voltage	30V
Height	1mm
Length	2.9mm
Width	1.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant