DMN6066SSD-13

new-10%

Manufacturer part number:DMN6066SSD-13

Manufacturer:Diodes Incorporated

Description:MOSFET 2N-CH 60V 3.3A 8SO

Case Package:SOT-23

Datasheet:DMN6066SSD-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	66mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Max Power Dissipation	1.8W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	DMN6066SSD
Pin Count	8
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.14W
Turn On Delay Time	2.7 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	66m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	502pF @ 30V
Gate Charge (Qg) (Max) @ Vgs	10.3nC @ 10V
Rise Time	2.4ns
Drain to Source Voltage (Vdss)	60V
Fall Time (Typ)	5.4 ns
Turn-Off Delay Time	14.7 ns
Continuous Drain Current (ID)	3.3A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	4.4A
DS Breakdown Voltage-Min	60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free