IRF7309TRPBF             Description

 The fifth generation HEXFET of the International Rectifier Company uses advanced technology to achieve the lowest possible on-resistance area per silicon. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rough device design, provides designers with an extremely efficient device used in a variety of applications.SO-8 has been improved through a customized framework to enhance thermal and multi-chip capabilities, making it ideal for a variety of power applications. Through these improvements, a variety of devices can be used in applications that greatly reduce circuit board space. Package design for gas phase, infrared or wave soldering technology in typical printed circuit board installation applications, it is possible to consume more than 0.8W.

IRF7309TRPBF                  Features

Generation Technology

 Ultra Low On-Resistance

Dual N and P Channel Mosfet

Surface Mount

Available in Tape&Reel

Dynamic dv/dt Rating

Fast Switching Lead-Free

 IRF7309TRPBF               Applications

This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rough device design, provides designers with an extremely efficient device used in a variety of applications.