NTZD5110NT1G

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Manufacturer part number:NTZD5110NT1G

Manufacturer:ON Semiconductor

Description:MOSFET 2N-CH 60V 0.294A SOT563

Case Package:SOT-23

Datasheet:NTZD5110NT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	1.6Ohm
Subcategory	FET General Purpose Power
Max Power Dissipation	900mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	NTZD5110N
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250mW
Turn On Delay Time	12 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	24.5pF @ 20V
Gate Charge (Qg) (Max) @ Vgs	0.7nC @ 4.5V
Rise Time	7.3ns
Drain to Source Voltage (Vdss)	60V
Fall Time (Typ)	7.3 ns
Turn-Off Delay Time	63.7 ns
Continuous Drain Current (ID)	294mA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	600μm
Length	1.7mm
Width	1.3mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free