ZXMC6A09DN8TA

new-10%

Manufacturer part number:ZXMC6A09DN8TA

Manufacturer:Diodes Incorporated

Description:MOSFET N/P-CH 60V 8-SOIC

Case Package:SOT-23

Datasheet:ZXMC6A09DN8TA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	55mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW THRESHOLD
Max Power Dissipation	2.1W
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	5.1A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.1W
Turn On Delay Time	4.6 ns
Power - Max	1.8W
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	45m Ω @ 8.2A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds	1407pF @ 40V
Current - Continuous Drain (Id) @ 25°C	3.9A 3.7A
Gate Charge (Qg) (Max) @ Vgs	24.2nC @ 10V
Rise Time	5.8ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	23 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	5.1A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	3.9A
Drain to Source Breakdown Voltage	60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free