DMN6070SSD-13

new-10%

Manufacturer part number:DMN6070SSD-13

Manufacturer:Diodes Incorporated

Description:MOSFET 2N-CH 60V 3.3A 8-SO

Case Package:SOT-23

Datasheet:DMN6070SSD-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Max Power Dissipation	1.5W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Reference Standard	AEC-Q101
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Turn On Delay Time	3.5 ns
Power - Max	1.2W
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	588pF @ 30V
Gate Charge (Qg) (Max) @ Vgs	12.3nC @ 10V
Rise Time	4.1ns
Drain to Source Voltage (Vdss)	60V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	3.3A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Avalanche Energy Rating (Eas)	5.9 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.5mm
Length	4.95mm
Width	3.95mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant