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NDC7001C

NDC7001C

NDC7001C

ON Semiconductor

NDC7001C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

NDC7001C Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 36mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 2Ohm
Subcategory Other Transistors
Max Power Dissipation 700mW
Terminal Form GULL WING
Current Rating 350mA
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 960mW
Turn On Delay Time 2.8 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 510mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 20pF @ 25V
Current - Continuous Drain (Id) @ 25°C 510mA 340mA
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V
Rise Time 10ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 10 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 510mA
Threshold Voltage 2.1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.51A
Drain to Source Breakdown Voltage 60V
Dual Supply Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs 2.1 V
Min Breakdown Voltage 60V
Height 900μm
Length 3mm
Width 1.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.24705 $0.74115
6,000 $0.23112 $1.38672
15,000 $0.21518 $3.2277
30,000 $0.20402 $6.1206
NDC7001C Product Details
NDC7001C Description

The NDC7001C is a dual N and P-Channel Enhancement Mode Field Effect Transistor made with ON Semiconductor's unique DMOS technology. This high-density method was created to reduce on-state resistance, provide durable and reliable performance, and allow for quick switching. Low voltage, low current, switching, and power supply applications are ideal for the NDC7001C transistor.

NDC7001C Features

Q1:
0.51 A, 60 V
RDS(ON) = 2 Ω @ VGS = 10 V
RDS(ON) = 4 Ω @ VGS = 4.5 V
Q2:
-0.34 A, 60 V
RDS(ON) = 5 Ω @ VGS = -10 V
RDS(ON) = 7.5 Ω @ VGS = -4.5 V
High density cell design for low RDS (ON)
Design using copper lead-frame for superior thermal and electrical capabilities

NDC7001C Applications

Industrial
Power Management
Automotive
Vehicle Electrification
ADAS
Powertrain, Safety and Security
Body Electronics and LED Lighting
Technology

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