DMC2038LVTQ-7

new-10%

Manufacturer part number:DMC2038LVTQ-7

Manufacturer:Diodes Incorporated

Description:MOSFET BVDSS: 8V 24V TSOT26

Case Package:SOT-23

Datasheet:DMC2038LVTQ-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
JESD-30 Code	R-PDSO-G6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	800mW Ta
FET Type	N and P-Channel Complementary
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35m Ω @ 4A, 4.5V, 74m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	530pF @ 10V 705pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3.7A Ta 2.6A Ta
Gate Charge (Qg) (Max) @ Vgs	5.7nC @ 4.5V, 10nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID)	3.7A
Drain-source On Resistance-Max	0.035Ohm
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate, 1.8V Drive
Feedback Cap-Max (Crss)	100 pF
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant