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SSM6N16FUTE85LF

SSM6N16FUTE85LF

SSM6N16FUTE85LF

Toshiba Semiconductor and Storage

MOSFET N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1

SOT-23

SSM6N16FUTE85LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Powers
Max Power Dissipation 200mW
Reach Compliance Code unknown
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 70 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 3 Ω @ 10mA, 4V
Vgs(th) (Max) @ Id 1.1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 9.3pF @ 3V
Drain to Source Voltage (Vdss) 20V
Turn-Off Delay Time 125 ns
Continuous Drain Current (ID) 100mA
Gate to Source Voltage (Vgs) 1.1V
Drain Current-Max (Abs) (ID) 0.1A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.679536 $0.679536
10 $0.641073 $6.41073
100 $0.604785 $60.4785
500 $0.570552 $285.276
1000 $0.538257 $538.257

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