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DMN62D0LFB-7

DMN62D0LFB-7

DMN62D0LFB-7

Diodes Incorporated

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2 Ω @ 100mA, 4V ±20V 32pF @ 25V 0.45nC @ 4.5V 60V 3-UFDFN

SOT-23

DMN62D0LFB-7 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 470mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 470mW
Case Connection DRAIN
Turn On Delay Time 3.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 100mA, 4V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 32pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.45nC @ 4.5V
Rise Time 3.4ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4V
Vgs (Max) ±20V
Fall Time (Typ) 16.3 ns
Turn-Off Delay Time 26.4 ns
Continuous Drain Current (ID) 100mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 2Ohm
DS Breakdown Voltage-Min 60V
Feedback Cap-Max (Crss) 6 pF
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.847056 $0.847056
10 $0.799109 $7.99109
100 $0.753877 $75.3877
500 $0.711205 $355.6025
1000 $0.670947 $670.947
DMN62D0LFB-7 Product Details

DMN62D0LFB-7 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 32pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 26.4 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 3.4 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.5V 4V).

DMN62D0LFB-7 Features


a continuous drain current (ID) of 100mA
the turn-off delay time is 26.4 ns
a 60V drain to source voltage (Vdss)


DMN62D0LFB-7 Applications


There are a lot of Diodes Incorporated
DMN62D0LFB-7 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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