IPP80N06S2L06AKSA1

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Manufacturer part number:IPP80N06S2L06AKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 80A TO220-3

Case Package:SOT-23

Datasheet:IPP80N06S2L06AKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	OptiMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Power Dissipation-Max	250W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250W
Turn On Delay Time	11 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6.3m Ω @ 69A, 10V
Vgs(th) (Max) @ Id	2V @ 180μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	3800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Rise Time	21ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	80A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	55V
Drain-source On Resistance-Max	0.0081Ohm
Drain to Source Breakdown Voltage	55V
Height	15.65mm
Length	10mm
Width	4.4mm
RoHS Status	RoHS Compliant