SI4483ADY-T1-GE3

new-10%

Manufacturer part number:SI4483ADY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 30V 19.2A 8-SOIC

Case Package:SOT-23

Datasheet:SI4483ADY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	186.993455mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Resistance	8.8mOhm
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	2.9W Ta 5.9W Tc
Power Dissipation	2.9W
Turn On Delay Time	70 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.8m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	2.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3900pF @ 15V
Current - Continuous Drain (Id) @ 25°C	19.2A Tc
Gate Charge (Qg) (Max) @ Vgs	135nC @ 10V
Rise Time	150ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	43 ns
Continuous Drain Current (ID)	13.5A
Threshold Voltage	-2.1V
Gate to Source Voltage (Vgs)	25V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free