FCB20N60F-F085

new-10%

Manufacturer part number:FCB20N60F-F085

Manufacturer:ON Semiconductor

Description:MOSFET N CH 600V 20A TO-263AB

Case Package:SOT-23

Datasheet:FCB20N60F-F085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 3 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Digi-Reel®
Series	Automotive, AEC-Q101, SuperFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Base Part Number	FCB20N60
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	405W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	405W
Case Connection	DRAIN
Turn On Delay Time	43 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	195m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2035pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	102nC @ 10V
Rise Time	66ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	42 ns
Turn-Off Delay Time	211 ns
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free