DMN65D8LDW-7

new-10%

Manufacturer part number:DMN65D8LDW-7

Manufacturer:Diodes Incorporated

Description:MOSFET 2N-CH 60V 0.18A SOT363

Case Package:SOT-23

Datasheet:DMN65D8LDW-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	6.010099mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	6Ohm
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Powers
Max Power Dissipation	300mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	DMN65D8LDW
Pin Count	6
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Turn On Delay Time	3.3 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6 Ω @ 115mA, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	22pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	0.87nC @ 10V
Rise Time	3.2ns
Drain to Source Voltage (Vdss)	60V
Fall Time (Typ)	6.3 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	180mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.15A
Drain to Source Breakdown Voltage	60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1.1mm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free