DMN65D8LW-7

new-10%

Manufacturer part number:DMN65D8LW-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 60V 0.3A SOT323

Case Package:SOT-23

Datasheet:DMN65D8LW-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Number of Pins	3
Weight	6.010099mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	300mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	2.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3 Ω @ 115mA, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	22pF @ 25V
Current - Continuous Drain (Id) @ 25°C	300mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.87nC @ 10V
Rise Time	2.8ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	7.3 ns
Turn-Off Delay Time	12.6 ns
Continuous Drain Current (ID)	300mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.26A
Drain-source On Resistance-Max	4Ohm
DS Breakdown Voltage-Min	60V
Height	1mm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free