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IRL2505PBF

  • IRL2505PBF
  • IRL2505PBF

IRL2505PBF

IRL2505PBF

Infineon Technologies

IRL2505PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRL2505PBF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 8mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 104A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 200W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 54A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 104A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 5V
Rise Time 160ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Fall Time (Typ) 84 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 104A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 90A
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Avalanche Energy Rating (Eas) 500 mJ
Recovery Time 210 ns
Nominal Vgs 2 V
Height 15.24mm
Length 10.5156mm
Width 4.69mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.72000 $2.72
10 $2.47300 $24.73
100 $2.01550 $201.55
500 $1.59958 $799.79
1,000 $1.35000 $1.35
IRL2505PBF Product Details

IRL2505PBF Description


The fifth generation HEXFET of International Rectifier Company adopts advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with extremely efficient and reliable devices for a variety of applications.TO-220 is the first choice for all commercial and industrial applications with a power consumption of about 50 watts. TO-220 is widely accepted throughout the industry because of its low thermal resistance and low packaging cost.


IRL2505PBF Features


Logic-Level Gate Drive

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating

175℃ Operating Temperature Fast Switching

Fully Avalanche Rated Lead-Free


IRL2505PBF  Applications


commercial and industrial applications

 

 


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