DMP10H400SE-13

new-10%

Manufacturer part number:DMP10H400SE-13

Manufacturer:Diodes Incorporated

Description:MOSFET P-CH 100V 2.3A/6A SOT223

Case Package:SOT-23

Datasheet:DMP10H400SE-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2W Ta 13.7W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	250m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1239pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.3A Ta 6A Tc
Gate Charge (Qg) (Max) @ Vgs	17.5nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	6A
Drain Current-Max (Abs) (ID)	2.3A
Drain-source On Resistance-Max	0.3Ohm
Pulsed Drain Current-Max (IDM)	10A
DS Breakdown Voltage-Min	100V
RoHS Status	ROHS3 Compliant