DMP2200UDW-13

new-10%

Manufacturer part number:DMP2200UDW-13

Manufacturer:Diodes Incorporated

Description:MOSFET 2P-CH 20V 0.9A SOT363

Case Package:SOT-23

Datasheet:DMP2200UDW-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Max Power Dissipation	450mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	DUAL GATE, ENHANCEMENT MODE
Power - Max	450mW
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	260m Ω @ 880mA, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	184pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	2.1nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Continuous Drain Current (ID)	900mA
Drain Current-Max (Abs) (ID)	0.9A
Drain-source On Resistance-Max	0.26Ohm
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	ROHS3 Compliant