FDC6401N

new-10%

Manufacturer part number:FDC6401N

Manufacturer:ON Semiconductor

Description:FDC6401N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDC6401N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	36mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	70MOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Max Power Dissipation	960mW
Terminal Form	GULL WING
Current Rating	3A
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	960mW
Turn On Delay Time	5 ns
Power - Max	700mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	70m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	324pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	4.6nC @ 4.5V
Rise Time	7ns
Fall Time (Typ)	1.6 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	3A
Threshold Voltage	900mV
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	3A
Drain to Source Breakdown Voltage	20V
Dual Supply Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Standard
Nominal Vgs	900 mV
Height	1.1mm
Length	3mm
Width	1.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free