DMS2220LFW-7

new-10%

Manufacturer part number:DMS2220LFW-7

Manufacturer:Diodes Incorporated

Description:MOSFET P-CH 20V 2.9A 8-DFN

Case Package:SOT-23

Datasheet:DMS2220LFW-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-VDFN Exposed Pad
Number of Pins	8
Weight	37.393021mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e4
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature	HIGH RELIABILITY
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	95m Ω @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	632pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.9A Ta
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
Continuous Drain Current (ID)	2.9A
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.095Ohm
Drain to Source Breakdown Voltage	-20V
FET Feature	Schottky Diode (Isolated)
Height	780μm
Length	3mm
Width	2mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free