DMS3014SSS-13

new-10%

Manufacturer part number:DMS3014SSS-13

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 30V 10.4A 8SO

Case Package:SOT-23

Datasheet:DMS3014SSS-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	1.55W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.55W
Turn On Delay Time	5.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13m Ω @ 10.4A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2296pF @ 15V
Current - Continuous Drain (Id) @ 25°C	10.4A Ta
Gate Charge (Qg) (Max) @ Vgs	45.7nC @ 10V
Rise Time	24.4ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	6.6 ns
Turn-Off Delay Time	33.1 ns
Continuous Drain Current (ID)	10.4A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	63A
FET Feature	Schottky Diode (Body)
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant