DMS3015SSS-13

new-10%

Manufacturer part number:DMS3015SSS-13

Manufacturer:Diodes Incorporated

Description:MOSFET MOSFET N-CHAN

Case Package:SOT-23

Datasheet:DMS3015SSS-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	7 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.55W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.55W
Turn On Delay Time	15.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11.9m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1276pF @ 15V
Current - Continuous Drain (Id) @ 25°C	11A Ta
Gate Charge (Qg) (Max) @ Vgs	30.6nC @ 10V
Rise Time	27.8ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	13.6 ns
Turn-Off Delay Time	29.7 ns
Continuous Drain Current (ID)	11A
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
FET Feature	Schottky Diode (Body)
Height	1.5mm
Length	4.95mm
Width	3.95mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free