FCP400N80Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FCP400N80Z Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperFET® II
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.95
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
195W Tc
Element Configuration
Single
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
400m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1.1mA
Input Capacitance (Ciss) (Max) @ Vds
2350pF @ 1000V
Current - Continuous Drain (Id) @ 25°C
14A Tc
Gate Charge (Qg) (Max) @ Vgs
56nC @ 10V
Drain to Source Voltage (Vdss)
800V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
14A
Threshold Voltage
4.5V
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
800
$1.64063
$1312.504
FCP400N80Z Product Details
FCP400N80Z Description
Fairchild Semiconductors' SuperFET? II MOSFET family is a brand-new high-voltage super-junction (SJ) MOSFET family that uses charge balancing technology to achieve low on-resistance and reduced gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase the dv/dt rate, and increase the available energy. Furthermore, an internal gate-source ESD diode provides for resistance to 2kV HBM surge stress. As a result, SuperFET II MOSFETs are ideal for switching power applications like audio, laptop adapters, lighting, ATX power, and industrial power applications.