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FCP400N80Z

FCP400N80Z

FCP400N80Z

ON Semiconductor

FCP400N80Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FCP400N80Z Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperFET® II
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 195W Tc
Element Configuration Single
FET Type N-Channel
Rds On (Max) @ Id, Vgs 400m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.1mA
Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 14A
Threshold Voltage 4.5V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
800 $1.64063 $1312.504
FCP400N80Z Product Details

FCP400N80Z Description


Fairchild Semiconductors' SuperFET? II MOSFET family is a brand-new high-voltage super-junction (SJ) MOSFET family that uses charge balancing technology to achieve low on-resistance and reduced gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase the dv/dt rate, and increase the available energy. Furthermore, an internal gate-source ESD diode provides for resistance to 2kV HBM surge stress. As a result, SuperFET II MOSFETs are ideal for switching power applications like audio, laptop adapters, lighting, ATX power, and industrial power applications.



FCP400N80Z Features


?Rds(o n) = 340 mQ (Typ. Rds(o n) = 340 mQ (Typ. Rds(o


?Extremely Low Gate Charge (Qg = 43 nC)


?Low Eoss (4.1 uJ @ 400 V)


?Low Effective Output Capacitance (Coss(eff.) = 138 pF)


?Avalanche tested to the nth degree


?Compliance with RoHS


?ESD Capability Enhancement



FCP400N80Z Applications


?Power Supply (AC-DC)


?Lighting with LEDs


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